savantic semiconductor product specification silicon pnp power transistors 2sa1111 2SA1112 d escription with to-220 package complement to type 2sc2591/2592 good linearity of h f e high v ceo applications for audio frequency, high power amplifiers application pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sa1111 -150 v cbo collector- base voltage 2SA1112 open emitter -180 v 2sa1111 -150 v ceo collector- emitter voltage 2SA1112 open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -1 a i cm collector current-peak -1.5 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2sa1111 2SA1112 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sa1111 -150 v (br)ceo collector-emitter breakdown voltage 2SA1112 i c =-0.1ma ,i b =0 -180 v v (br)ebo emitter-base breakdown v oltage i e =-10a ,i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -0.5 -2.0 v v besat base-emitter saturation voltage i c =-0.5a; i b =-50ma -1.0 -2.0 v i cbo collector cut-off current v cb =-120v; i e =0 -1 a i ebo emitter cut-off current v eb =-4v; i c =0 -1 a h fe-1 dc current gain i c =-150ma ; v ce =-10v 65 330 h fe-2 dc current gain i c =-500ma ; v ce =-5v 50 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 30 pf f t transition frequency i c =50ma ; v ce =-10v 200 mhz h fe-1 classifications p q r s 65-110 90-155 130-220 185-330
savantic semiconductor product specification 3 silicon pnp power transistors 2sa1111 2SA1112 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2sa1111 2SA1112
|